@article{3538,
  author       = {Szekeres, A. and Nikolova, T. and Simeonov, S. and Gushterov, A. and Hamelmann, Frank and Heinzmann, U.},
  issn         = {00262692},
  journal      = {Microelectronics Journal},
  number       = {1},
  pages        = {64--70},
  publisher    = {Elsevier BV},
  title        = {{Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices}},
  doi          = {10.1016/j.mejo.2005.06.013},
  volume       = {37},
  year         = {2006},
}