[{"publication_status":"published","issue":"1","publication":"Microelectronics Journal","publication_identifier":{"issn":["00262692"]},"type":"journal_article","user_id":"216459","date_created":"2023-09-01T09:20:27Z","title":"Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices","volume":37,"_id":"3538","year":"2006","language":[{"iso":"eng"}],"doi":"10.1016/j.mejo.2005.06.013","intvolume":"        37","date_updated":"2026-03-17T15:28:46Z","page":"64-70","publisher":"Elsevier BV","citation":{"ama":"Szekeres A, Nikolova T, Simeonov S, Gushterov A, Hamelmann F, Heinzmann U. Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. <i>Microelectronics Journal</i>. 2006;37(1):64-70. doi:<a href=\"https://doi.org/10.1016/j.mejo.2005.06.013\">10.1016/j.mejo.2005.06.013</a>","mla":"Szekeres, A., et al. “Plasma-Assisted Chemical Vapor Deposited Silicon Oxynitride as an Alternative Material for Gate Dielectric in MOS Devices.” <i>Microelectronics Journal</i>, vol. 37, no. 1, Elsevier BV, 2006, pp. 64–70, doi:<a href=\"https://doi.org/10.1016/j.mejo.2005.06.013\">10.1016/j.mejo.2005.06.013</a>.","short":"A. Szekeres, T. Nikolova, S. Simeonov, A. Gushterov, F. Hamelmann, U. Heinzmann, Microelectronics Journal 37 (2006) 64–70.","chicago":"Szekeres, A., T. Nikolova, S. Simeonov, A. Gushterov, Frank Hamelmann, and U. Heinzmann. “Plasma-Assisted Chemical Vapor Deposited Silicon Oxynitride as an Alternative Material for Gate Dielectric in MOS Devices.” <i>Microelectronics Journal</i> 37, no. 1 (2006): 64–70. <a href=\"https://doi.org/10.1016/j.mejo.2005.06.013\">https://doi.org/10.1016/j.mejo.2005.06.013</a>.","apa":"Szekeres, A., Nikolova, T., Simeonov, S., Gushterov, A., Hamelmann, F., &#38; Heinzmann, U. (2006). Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. <i>Microelectronics Journal</i>, <i>37</i>(1), 64–70. <a href=\"https://doi.org/10.1016/j.mejo.2005.06.013\">https://doi.org/10.1016/j.mejo.2005.06.013</a>","bibtex":"@article{Szekeres_Nikolova_Simeonov_Gushterov_Hamelmann_Heinzmann_2006, title={Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices}, volume={37}, DOI={<a href=\"https://doi.org/10.1016/j.mejo.2005.06.013\">10.1016/j.mejo.2005.06.013</a>}, number={1}, journal={Microelectronics Journal}, publisher={Elsevier BV}, author={Szekeres, A. and Nikolova, T. and Simeonov, S. and Gushterov, A. and Hamelmann, Frank and Heinzmann, U.}, year={2006}, pages={64–70} }","alphadin":"<span style=\"font-variant:small-caps;\">Szekeres, A.</span> ; <span style=\"font-variant:small-caps;\">Nikolova, T.</span> ; <span style=\"font-variant:small-caps;\">Simeonov, S.</span> ; <span style=\"font-variant:small-caps;\">Gushterov, A.</span> ; <span style=\"font-variant:small-caps;\">Hamelmann, Frank</span> ; <span style=\"font-variant:small-caps;\">Heinzmann, U.</span>: Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. In: <i>Microelectronics Journal</i> Bd. 37, Elsevier BV (2006), Nr. 1, S. 64–70","ieee":"A. Szekeres, T. Nikolova, S. Simeonov, A. Gushterov, F. Hamelmann, and U. Heinzmann, “Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices,” <i>Microelectronics Journal</i>, vol. 37, no. 1, pp. 64–70, 2006."},"author":[{"first_name":"A.","full_name":"Szekeres, A.","last_name":"Szekeres"},{"full_name":"Nikolova, T.","last_name":"Nikolova","first_name":"T."},{"last_name":"Simeonov","full_name":"Simeonov, S.","first_name":"S."},{"first_name":"A.","full_name":"Gushterov, A.","last_name":"Gushterov"},{"last_name":"Hamelmann","full_name":"Hamelmann, Frank","orcid":"0000-0001-6141-9874","id":"208487","first_name":"Frank"},{"first_name":"U.","last_name":"Heinzmann","full_name":"Heinzmann, U."}],"status":"public"}]