---
_id: '3538'
author:
- first_name: A.
  full_name: Szekeres, A.
  last_name: Szekeres
- first_name: T.
  full_name: Nikolova, T.
  last_name: Nikolova
- first_name: S.
  full_name: Simeonov, S.
  last_name: Simeonov
- first_name: A.
  full_name: Gushterov, A.
  last_name: Gushterov
- first_name: Frank
  full_name: Hamelmann, Frank
  id: '208487'
  last_name: Hamelmann
  orcid: 0000-0001-6141-9874
- first_name: U.
  full_name: Heinzmann, U.
  last_name: Heinzmann
citation:
  alphadin: '<span style="font-variant:small-caps;">Szekeres, A.</span> ; <span style="font-variant:small-caps;">Nikolova,
    T.</span> ; <span style="font-variant:small-caps;">Simeonov, S.</span> ; <span
    style="font-variant:small-caps;">Gushterov, A.</span> ; <span style="font-variant:small-caps;">Hamelmann,
    Frank</span> ; <span style="font-variant:small-caps;">Heinzmann, U.</span>: Plasma-assisted
    chemical vapor deposited silicon oxynitride as an alternative material for gate
    dielectric in MOS devices. In: <i>Microelectronics Journal</i> Bd. 37, Elsevier
    BV (2006), Nr. 1, S. 64–70'
  ama: Szekeres A, Nikolova T, Simeonov S, Gushterov A, Hamelmann F, Heinzmann U.
    Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative
    material for gate dielectric in MOS devices. <i>Microelectronics Journal</i>.
    2006;37(1):64-70. doi:<a href="https://doi.org/10.1016/j.mejo.2005.06.013">10.1016/j.mejo.2005.06.013</a>
  apa: Szekeres, A., Nikolova, T., Simeonov, S., Gushterov, A., Hamelmann, F., &#38;
    Heinzmann, U. (2006). Plasma-assisted chemical vapor deposited silicon oxynitride
    as an alternative material for gate dielectric in MOS devices. <i>Microelectronics
    Journal</i>, <i>37</i>(1), 64–70. <a href="https://doi.org/10.1016/j.mejo.2005.06.013">https://doi.org/10.1016/j.mejo.2005.06.013</a>
  bibtex: '@article{Szekeres_Nikolova_Simeonov_Gushterov_Hamelmann_Heinzmann_2006,
    title={Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative
    material for gate dielectric in MOS devices}, volume={37}, DOI={<a href="https://doi.org/10.1016/j.mejo.2005.06.013">10.1016/j.mejo.2005.06.013</a>},
    number={1}, journal={Microelectronics Journal}, publisher={Elsevier BV}, author={Szekeres,
    A. and Nikolova, T. and Simeonov, S. and Gushterov, A. and Hamelmann, Frank and
    Heinzmann, U.}, year={2006}, pages={64–70} }'
  chicago: 'Szekeres, A., T. Nikolova, S. Simeonov, A. Gushterov, Frank Hamelmann,
    and U. Heinzmann. “Plasma-Assisted Chemical Vapor Deposited Silicon Oxynitride
    as an Alternative Material for Gate Dielectric in MOS Devices.” <i>Microelectronics
    Journal</i> 37, no. 1 (2006): 64–70. <a href="https://doi.org/10.1016/j.mejo.2005.06.013">https://doi.org/10.1016/j.mejo.2005.06.013</a>.'
  ieee: A. Szekeres, T. Nikolova, S. Simeonov, A. Gushterov, F. Hamelmann, and U.
    Heinzmann, “Plasma-assisted chemical vapor deposited silicon oxynitride as an
    alternative material for gate dielectric in MOS devices,” <i>Microelectronics
    Journal</i>, vol. 37, no. 1, pp. 64–70, 2006.
  mla: Szekeres, A., et al. “Plasma-Assisted Chemical Vapor Deposited Silicon Oxynitride
    as an Alternative Material for Gate Dielectric in MOS Devices.” <i>Microelectronics
    Journal</i>, vol. 37, no. 1, Elsevier BV, 2006, pp. 64–70, doi:<a href="https://doi.org/10.1016/j.mejo.2005.06.013">10.1016/j.mejo.2005.06.013</a>.
  short: A. Szekeres, T. Nikolova, S. Simeonov, A. Gushterov, F. Hamelmann, U. Heinzmann,
    Microelectronics Journal 37 (2006) 64–70.
date_created: 2023-09-01T09:20:27Z
date_updated: 2026-03-17T15:28:46Z
doi: 10.1016/j.mejo.2005.06.013
intvolume: '        37'
issue: '1'
language:
- iso: eng
page: 64-70
publication: Microelectronics Journal
publication_identifier:
  issn:
  - '00262692'
publication_status: published
publisher: Elsevier BV
status: public
title: Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative
  material for gate dielectric in MOS devices
type: journal_article
user_id: '216459'
volume: 37
year: '2006'
...