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Heinzmann, Microelectronics Journal 37 (2006) 64–70.","ama":"Szekeres A, Nikolova T, Simeonov S, Gushterov A, Hamelmann F, Heinzmann U. Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. <i>Microelectronics Journal</i>. 2006;37(1):64-70. doi:<a href=\"https://doi.org/10.1016/j.mejo.2005.06.013\">10.1016/j.mejo.2005.06.013</a>","apa":"Szekeres, A., Nikolova, T., Simeonov, S., Gushterov, A., Hamelmann, F., &#38; Heinzmann, U. (2006). Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. <i>Microelectronics Journal</i>, <i>37</i>(1), 64–70. <a href=\"https://doi.org/10.1016/j.mejo.2005.06.013\">https://doi.org/10.1016/j.mejo.2005.06.013</a>","alphadin":"<span style=\"font-variant:small-caps;\">Szekeres, A.</span> ; <span style=\"font-variant:small-caps;\">Nikolova, T.</span> ; <span style=\"font-variant:small-caps;\">Simeonov, S.</span> ; <span style=\"font-variant:small-caps;\">Gushterov, A.</span> ; <span style=\"font-variant:small-caps;\">Hamelmann, Frank</span> ; <span style=\"font-variant:small-caps;\">Heinzmann, U.</span>: Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. In: <i>Microelectronics Journal</i> Bd. 37, Elsevier BV (2006), Nr. 1, S. 64–70","ieee":"A. Szekeres, T. Nikolova, S. Simeonov, A. Gushterov, F. Hamelmann, and U. Heinzmann, “Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices,” <i>Microelectronics Journal</i>, vol. 37, no. 1, pp. 64–70, 2006."},"author":[{"full_name":"Szekeres, A.","last_name":"Szekeres","first_name":"A."},{"first_name":"T.","last_name":"Nikolova","full_name":"Nikolova, T."},{"last_name":"Simeonov","first_name":"S.","full_name":"Simeonov, S."},{"first_name":"A.","last_name":"Gushterov","full_name":"Gushterov, A."},{"id":"208487","orcid":"0000-0001-6141-9874","full_name":"Hamelmann, Frank","first_name":"Frank","last_name":"Hamelmann"},{"last_name":"Heinzmann","first_name":"U.","full_name":"Heinzmann, U."}],"publication_status":"published","date_updated":"2026-03-17T15:28:46Z","doi":"10.1016/j.mejo.2005.06.013","year":"2006","user_id":"216459","_id":"3538","title":"Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices","publisher":"Elsevier BV","page":"64-70","issue":"1"}]
