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Heiland, “Untersuchungen analytischer Modelle zur Beschreibung des Stromtransports in 6H-SiC-Schottky-Dioden,” presented at the Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Berlin, 1995."}},{"date_updated":"2026-03-17T15:28:26Z","author":[{"first_name":"Frank","full_name":"Wischmeyer, Frank","last_name":"Wischmeyer"},{"id":"35809","first_name":"Christian","orcid_put_code_url":"https://api.orcid.org/v2.0/0000-0002-6391-6548/work/204907510","last_name":"Schröder","full_name":"Schröder, Christian","orcid":"0000-0002-6391-6548"},{"first_name":"Raban","full_name":"Held, Raban","last_name":"Held"},{"first_name":"Wolfgang","full_name":"Skorupa, Wolfgang","last_name":"Skorupa"},{"first_name":"Werner","last_name":"Heiland","full_name":"Heiland, Werner"}],"type":"conference","user_id":"35809","publication":"Verhandlungen der Deutschen Physikalischen Gesellschaft","date_created":"2022-04-22T14:14:45Z","conference":{"name":"Frühjahrstagung der Deutschen Physikalischen Gesellschaft","location":"Berlin"},"citation":{"ieee":"F. Wischmeyer, C. Schröder, R. Held, W. Skorupa, and W. Heiland, “Amorphisierung von 6H-SiC durch Ionenimplantationen als planare Randstruktur für Siliziumkarbidbauelemente,” in <i>Verhandlungen der Deutschen Physikalischen Gesellschaft</i>, Berlin, 1995.","apa":"Wischmeyer, F., Schröder, C., Held, R., Skorupa, W., &#38; Heiland, W. (1995). Amorphisierung von 6H-SiC durch Ionenimplantationen als planare Randstruktur für Siliziumkarbidbauelemente. In <i>Verhandlungen der Deutschen Physikalischen Gesellschaft</i>. Berlin.","mla":"Wischmeyer, Frank, et al. “Amorphisierung von 6H-SiC durch Ionenimplantationen als planare Randstruktur für Siliziumkarbidbauelemente.” <i>Verhandlungen der Deutschen Physikalischen Gesellschaft</i>, 1995.","short":"F. Wischmeyer, C. Schröder, R. Held, W. Skorupa, W. Heiland, in: Verhandlungen der Deutschen Physikalischen Gesellschaft, 1995.","bibtex":"@inproceedings{Wischmeyer_Schröder_Held_Skorupa_Heiland_1995, title={Amorphisierung von 6H-SiC durch Ionenimplantationen als planare Randstruktur für Siliziumkarbidbauelemente}, booktitle={Verhandlungen der Deutschen Physikalischen Gesellschaft}, author={Wischmeyer, Frank and Schröder, Christian and Held, Raban and Skorupa, Wolfgang and Heiland, Werner}, year={1995} }","alphadin":"<span style=\"font-variant:small-caps;\">Wischmeyer, Frank</span> ; <span style=\"font-variant:small-caps;\">Schröder, Christian</span> ; <span style=\"font-variant:small-caps;\">Held, Raban</span> ; <span style=\"font-variant:small-caps;\">Skorupa, Wolfgang</span> ; <span style=\"font-variant:small-caps;\">Heiland, Werner</span>: Amorphisierung von 6H-SiC durch Ionenimplantationen als planare Randstruktur für Siliziumkarbidbauelemente. In: <i>Verhandlungen der Deutschen Physikalischen Gesellschaft</i>, 1995","ama":"Wischmeyer F, Schröder C, Held R, Skorupa W, Heiland W. Amorphisierung von 6H-SiC durch Ionenimplantationen als planare Randstruktur für Siliziumkarbidbauelemente. In: <i>Verhandlungen der Deutschen Physikalischen Gesellschaft</i>. ; 1995.","chicago":"Wischmeyer, Frank, Christian Schröder, Raban Held, Wolfgang Skorupa, and Werner Heiland. “Amorphisierung von 6H-SiC durch Ionenimplantationen als planare Randstruktur für Siliziumkarbidbauelemente.” In <i>Verhandlungen der Deutschen Physikalischen Gesellschaft</i>, 1995."},"_id":"1908","title":"Amorphisierung von 6H-SiC durch Ionenimplantationen als planare Randstruktur für Siliziumkarbidbauelemente","year":"1995","project":[{"name":"Bielefelder Institut für Angewandte Materialforschung","_id":"f89a05bb-bcea-11ed-9442-ed382659bc06"}],"language":[{"iso":"ger"}],"status":"public"}]