{"doi":"10.4229/EUPVSEC20162016-3DV.1.4","type":"conference","user_id":"231260","language":[{"iso":"eng"}],"citation":{"apa":"Weicht, J., Hamelmann, F., & Behrens, G. (2016). Changes in temperature-coefficient of the diode model caused by light-induced degradation of a-Si/μc-Si solar cells. Presented at the 32nd European Photovoltaic Solar Energy Conference and Exhibition, München. https://doi.org/10.4229/EUPVSEC20162016-3DV.1.4","bibtex":"@inproceedings{Weicht_Hamelmann_Behrens_2016, title={Changes in temperature-coefficient of the diode model caused by light-induced degradation of a-Si/μc-Si solar cells}, DOI={10.4229/EUPVSEC20162016-3DV.1.4}, author={Weicht, Johannes and Hamelmann, Frank and Behrens, Grit}, year={2016} }","mla":"Weicht, Johannes, et al. Changes in Temperature-Coefficient of the Diode Model Caused by Light-Induced Degradation of a-Si/Μc-Si Solar Cells. 2016, doi:10.4229/EUPVSEC20162016-3DV.1.4.","ama":"Weicht J, Hamelmann F, Behrens G. Changes in temperature-coefficient of the diode model caused by light-induced degradation of a-Si/μc-Si solar cells. In: ; 2016. doi:10.4229/EUPVSEC20162016-3DV.1.4","short":"J. Weicht, F. Hamelmann, G. Behrens, in: 2016.","alphadin":"Weicht, Johannes ; Hamelmann, Frank ; Behrens, Grit: Changes in temperature-coefficient of the diode model caused by light-induced degradation of a-Si/μc-Si solar cells. In: , 2016","ieee":"J. Weicht, F. Hamelmann, and G. Behrens, “Changes in temperature-coefficient of the diode model caused by light-induced degradation of a-Si/μc-Si solar cells,” presented at the 32nd European Photovoltaic Solar Energy Conference and Exhibition, München, 2016.","chicago":"Weicht, Johannes, Frank Hamelmann, and Grit Behrens. “Changes in Temperature-Coefficient of the Diode Model Caused by Light-Induced Degradation of a-Si/Μc-Si Solar Cells,” 2016. https://doi.org/10.4229/EUPVSEC20162016-3DV.1.4."},"publication_identifier":{"issn":["2196-100X"]},"title":"Changes in temperature-coefficient of the diode model caused by light-induced degradation of a-Si/μc-Si solar cells","date_updated":"2025-05-16T08:52:48Z","date_created":"2019-04-17T13:04:49Z","year":"2016","conference":{"location":"München","end_date":"2016-06-24","name":"32nd European Photovoltaic Solar Energy Conference and Exhibition","start_date":"2016-06-20"},"author":[{"last_name":"Weicht","first_name":"Johannes","full_name":"Weicht, Johannes"},{"full_name":"Hamelmann, Frank","first_name":"Frank","last_name":"Hamelmann","id":"208487","orcid":"0000-0001-6141-9874"},{"last_name":"Behrens","id":"207629","first_name":"Grit","orcid_put_code_url":"https://api.orcid.org/v2.0/0009-0009-0247-8204/work/184175890","full_name":"Behrens, Grit","orcid":"0009-0009-0247-8204"}],"status":"public","_id":"175","alternative_id":["3514"],"abstract":[{"text":"In our work we observe the temperature coefficients before and after light-induced degradation of amorphous/micro-crystalline (a-Si/μc-Si) tandem silicon-based solar cells. We show that during light-induced degradation the temperature parameters of the serial and parallel resistance, photo current and the saturation current in the diode model change: the temperature has a stronger effect after the light-induced degradation, the temperaturecoefficient of silicon-based thin film solar cells varies during the light-induced degradation.","lang":"eng"}]}