{"type":"journal_article","year":"1997","intvolume":"        81","issue":"5","date_updated":"2023-09-01T10:16:25Z","publisher":"AIP Publishing","volume":81,"user_id":"216459","publication":"Journal of Applied Physics","title":"Thermal stability of W1−xSix/Si multilayers under rapid thermal annealing","date_created":"2023-09-01T10:08:56Z","_id":"3557","publication_status":"published","status":"public","abstract":[{"lang":"eng","text":"                  W 1−x Si x /Si multilayers (MLs) (x⩽0.66) were deposited onto oxidized Si substrates, heat treated by rapid thermal (RTA) and standard furnace annealing up to 1000 °C for 30 s and 25 min, respectively, and analyzed by various x-ray techniques and Rutherford backscattering spectrometry. W1−xSix/Si MLs are more stable the higher the value of x because the driving force for interdiffusion is suppressed by the doping; the temperature for complete interdiffusion increases from 500 to 850 °C as x increases from 0 to 0.66. The as-deposited MLs were amorphous. Their thermal stability increases with increasing x. The interface roughness is independent of x but increases with increasing RTA temperature. The reflectivity of W1−xSix/Si MLs is lower than that of W/Si because of lower optical contrast.\r\n                "}],"doi":"10.1063/1.364273","citation":{"ama":"Senderak R, Jergel M, Luby S, et al. Thermal stability of W1−xSix/Si multilayers under rapid thermal annealing. <i>Journal of Applied Physics</i>. 1997;81(5):2229-2235. doi:<a href=\"https://doi.org/10.1063/1.364273\">10.1063/1.364273</a>","mla":"Senderak, R., et al. “Thermal Stability of W1−xSix/Si Multilayers under Rapid Thermal Annealing.” <i>Journal of Applied Physics</i>, vol. 81, no. 5, AIP Publishing, 1997, pp. 2229–35, doi:<a href=\"https://doi.org/10.1063/1.364273\">10.1063/1.364273</a>.","short":"R. Senderak, M. Jergel, S. Luby, E. Majkova, V. Holy, G. Haindl, F. Hamelmann, U. Kleineberg, U. Heinzmann, Journal of Applied Physics 81 (1997) 2229–2235.","apa":"Senderak, R., Jergel, M., Luby, S., Majkova, E., Holy, V., Haindl, G., … Heinzmann, U. (1997). Thermal stability of W1−xSix/Si multilayers under rapid thermal annealing. <i>Journal of Applied Physics</i>, <i>81</i>(5), 2229–2235. <a href=\"https://doi.org/10.1063/1.364273\">https://doi.org/10.1063/1.364273</a>","ieee":"R. Senderak <i>et al.</i>, “Thermal stability of W1−xSix/Si multilayers under rapid thermal annealing,” <i>Journal of Applied Physics</i>, vol. 81, no. 5, pp. 2229–2235, 1997.","bibtex":"@article{Senderak_Jergel_Luby_Majkova_Holy_Haindl_Hamelmann_Kleineberg_Heinzmann_1997, title={Thermal stability of W1−xSix/Si multilayers under rapid thermal annealing}, volume={81}, DOI={<a href=\"https://doi.org/10.1063/1.364273\">10.1063/1.364273</a>}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Senderak, R. and Jergel, M. and Luby, S. and Majkova, E. and Holy, V. and Haindl, G. and Hamelmann, Frank and Kleineberg, U. and Heinzmann, U.}, year={1997}, pages={2229–2235} }","chicago":"Senderak, R., M. Jergel, S. Luby, E. Majkova, V. Holy, G. Haindl, Frank Hamelmann, U. Kleineberg, and U. Heinzmann. “Thermal Stability of W1−xSix/Si Multilayers under Rapid Thermal Annealing.” <i>Journal of Applied Physics</i> 81, no. 5 (1997): 2229–35. <a href=\"https://doi.org/10.1063/1.364273\">https://doi.org/10.1063/1.364273</a>.","alphadin":"<span style=\"font-variant:small-caps;\"><span style=\"font-variant:small-caps;\">Senderak, R.</span> ; <span style=\"font-variant:small-caps;\">Jergel, M.</span> ; <span style=\"font-variant:small-caps;\">Luby, S.</span> ; <span style=\"font-variant:small-caps;\">Majkova, E.</span> ; <span style=\"font-variant:small-caps;\">Holy, V.</span> ; <span style=\"font-variant:small-caps;\">Haindl, G.</span> ; <span style=\"font-variant:small-caps;\">Hamelmann, Frank</span> ; <span style=\"font-variant:small-caps;\">Kleineberg, U.</span> ; u. a.</span>: Thermal stability of W1−xSix/Si multilayers under rapid thermal annealing. In: <i>Journal of Applied Physics</i> Bd. 81, AIP Publishing (1997), Nr. 5, S. 2229–2235"},"language":[{"iso":"eng"}],"page":"2229-2235","author":[{"first_name":"R.","full_name":"Senderak, R.","last_name":"Senderak"},{"full_name":"Jergel, M.","first_name":"M.","last_name":"Jergel"},{"first_name":"S.","full_name":"Luby, S.","last_name":"Luby"},{"first_name":"E.","full_name":"Majkova, E.","last_name":"Majkova"},{"last_name":"Holy","first_name":"V.","full_name":"Holy, V."},{"first_name":"G.","full_name":"Haindl, G.","last_name":"Haindl"},{"id":"208487","first_name":"Frank","full_name":"Hamelmann, Frank","last_name":"Hamelmann"},{"last_name":"Kleineberg","first_name":"U.","full_name":"Kleineberg, U."},{"first_name":"U.","full_name":"Heinzmann, U.","last_name":"Heinzmann"}],"publication_identifier":{"eissn":["1089-7550"],"issn":["0021-8979"]}}