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Thermal stability of W1−xSix/Si multilayers under rapid thermal annealing

R. Senderak, M. Jergel, S. Luby, E. Majkova, V. Holy, G. Haindl, F. Hamelmann, U. Kleineberg, U. Heinzmann, Journal of Applied Physics 81 (1997) 2229–2235.

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Artikel | Veröffentlicht | Englisch
Autor*in
Senderak, R.; Jergel, M.; Luby, S.; Majkova, E.; Holy, V.; Haindl, G.; Hamelmann, FrankFH Bielefeld; Kleineberg, U.; Heinzmann, U.
Abstract
W 1−x Si x /Si multilayers (MLs) (x⩽0.66) were deposited onto oxidized Si substrates, heat treated by rapid thermal (RTA) and standard furnace annealing up to 1000 °C for 30 s and 25 min, respectively, and analyzed by various x-ray techniques and Rutherford backscattering spectrometry. W1−xSix/Si MLs are more stable the higher the value of x because the driving force for interdiffusion is suppressed by the doping; the temperature for complete interdiffusion increases from 500 to 850 °C as x increases from 0 to 0.66. The as-deposited MLs were amorphous. Their thermal stability increases with increasing x. The interface roughness is independent of x but increases with increasing RTA temperature. The reflectivity of W1−xSix/Si MLs is lower than that of W/Si because of lower optical contrast.
Erscheinungsjahr
Zeitschriftentitel
Journal of Applied Physics
Band
81
Zeitschriftennummer
5
Seite
2229-2235
ISSN
eISSN
FH-PUB-ID

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Senderak, R. ; Jergel, M. ; Luby, S. ; Majkova, E. ; Holy, V. ; Haindl, G. ; Hamelmann, Frank ; Kleineberg, U. ; u. a.: Thermal stability of W1−xSix/Si multilayers under rapid thermal annealing. In: Journal of Applied Physics Bd. 81, AIP Publishing (1997), Nr. 5, S. 2229–2235
Senderak R, Jergel M, Luby S, et al. Thermal stability of W1−xSix/Si multilayers under rapid thermal annealing. Journal of Applied Physics. 1997;81(5):2229-2235. doi:10.1063/1.364273
Senderak, R., Jergel, M., Luby, S., Majkova, E., Holy, V., Haindl, G., … Heinzmann, U. (1997). Thermal stability of W1−xSix/Si multilayers under rapid thermal annealing. Journal of Applied Physics, 81(5), 2229–2235. https://doi.org/10.1063/1.364273
@article{Senderak_Jergel_Luby_Majkova_Holy_Haindl_Hamelmann_Kleineberg_Heinzmann_1997, title={Thermal stability of W1−xSix/Si multilayers under rapid thermal annealing}, volume={81}, DOI={10.1063/1.364273}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Senderak, R. and Jergel, M. and Luby, S. and Majkova, E. and Holy, V. and Haindl, G. and Hamelmann, Frank and Kleineberg, U. and Heinzmann, U.}, year={1997}, pages={2229–2235} }
Senderak, R., M. Jergel, S. Luby, E. Majkova, V. Holy, G. Haindl, Frank Hamelmann, U. Kleineberg, and U. Heinzmann. “Thermal Stability of W1−xSix/Si Multilayers under Rapid Thermal Annealing.” Journal of Applied Physics 81, no. 5 (1997): 2229–35. https://doi.org/10.1063/1.364273.
R. Senderak et al., “Thermal stability of W1−xSix/Si multilayers under rapid thermal annealing,” Journal of Applied Physics, vol. 81, no. 5, pp. 2229–2235, 1997.
Senderak, R., et al. “Thermal Stability of W1−xSix/Si Multilayers under Rapid Thermal Annealing.” Journal of Applied Physics, vol. 81, no. 5, AIP Publishing, 1997, pp. 2229–35, doi:10.1063/1.364273.

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