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1 Publikation
2006 | Artikel | FH-PUB-ID: 3538
Szekeres, A. ; Nikolova, T. ; Simeonov, S. ; Gushterov, A. ; Hamelmann, Frank ; Heinzmann, U.: Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. In: Microelectronics Journal Bd. 37, Elsevier BV (2006), Nr. 1, S. 64–70
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