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1 Publikation
2006 | Artikel | FH-PUB-ID: 3538
Szekeres, A., et al. “Plasma-Assisted Chemical Vapor Deposited Silicon Oxynitride as an Alternative Material for Gate Dielectric in MOS Devices.” Microelectronics Journal, vol. 37, no. 1, Elsevier BV, 2006, pp. 64–70, doi:10.1016/j.mejo.2005.06.013.
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