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1 Publikation
2006 | Artikel | FH-PUB-ID: 3538
Szekeres, A., T. Nikolova, S. Simeonov, A. Gushterov, Frank Hamelmann, and U. Heinzmann. “Plasma-Assisted Chemical Vapor Deposited Silicon Oxynitride as an Alternative Material for Gate Dielectric in MOS Devices.” Microelectronics Journal 37, no. 1 (2006): 64–70. https://doi.org/10.1016/j.mejo.2005.06.013.
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