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1 Publikation
2006 | Artikel | FH-PUB-ID: 3538
@article{Szekeres_Nikolova_Simeonov_Gushterov_Hamelmann_Heinzmann_2006, title={Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices}, volume={37}, DOI={10.1016/j.mejo.2005.06.013}, number={1}, journal={Microelectronics Journal}, publisher={Elsevier BV}, author={Szekeres, A. and Nikolova, T. and Simeonov, S. and Gushterov, A. and Hamelmann, Frank and Heinzmann, U.}, year={2006}, pages={64–70} }
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