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1 Publikation
2006 | Artikel | FH-PUB-ID: 3538
Szekeres, A., Nikolova, T., Simeonov, S., Gushterov, A., Hamelmann, F., & Heinzmann, U. (2006). Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. Microelectronics Journal, 37(1), 64–70. https://doi.org/10.1016/j.mejo.2005.06.013
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