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1 Publikation
2006 | Artikel | FH-PUB-ID: 3538
Szekeres A, Nikolova T, Simeonov S, Gushterov A, Hamelmann F, Heinzmann U. Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. Microelectronics Journal. 2006;37(1):64-70. doi:10.1016/j.mejo.2005.06.013
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