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1 Publikation
2006 | Artikel | FH-PUB-ID: 3538
A. Szekeres, T. Nikolova, S. Simeonov, A. Gushterov, F. Hamelmann, and U. Heinzmann, “Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices,” Microelectronics Journal, vol. 37, no. 1, pp. 64–70, 2006.
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